MA4E2532M-1113 Datasheet | Tyco Electronics

Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1113 Description The MA4E2532-1113 Series Sur Mount TM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The bination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Sur Mount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300 °C. The “ 0505 ” outline allows for Surface Mount placement and multi-functional polarity orientations. .. Inches Millimeters Dim A B C D Sq. E Min. 0.0445 0.0445 0.0040 0.0128 0.0128 Max. 0.0465 0.0465 0.0080 0.0148 0.0148 Min. 1.130 1.130 0.102 0.325 0.325 Max. 1.180 1.180 0.203 0.375 0.375 MA4E2532L-1113...